Ti/Ni/Ti/Au ohmic contact to n-type 6H-SiC

Materials Science and Engineering: B

Volumn 98, Issue 2, 2003, Pages 177-180

  Basak, D ^a   Mahanty, S ^b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b CSIR CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE   (India)

Author keywords

Barrier height; Ohmic contact; Schottky; Semiconductors; Silicon carbide

Indexed keywords

ANNEALING; MULTILAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS;

CONTACT SURFACES;

OHMIC CONTACTS;

EID: 0037445182     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00050-3     Document Type: Article

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