Ohmic contact behavior of carbon films on SiC

Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

  Lu, Weijie ^a   Mitchel, W C ^b   Thornton, Candis A ^b   Collins, W Eugene ^a   Landis, G R ^c   Smith, S R ^c  

^a FISK UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SPUTTER DEPOSITION;

CARBON FILM; RADIO FREQUENCY SPUTTERING; SCHOTTKY BEHAVIOR; THERMAL ANNEALING;

SILICON CARBIDE;

EID: 0037348917     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1540066     Document Type: Article

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