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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells

(7) Li, Qing a Xu, Shi J a Xie, Mao H a Tong, Shuk Y a Zhang, Xin H b Liu, Wei b Chua, Soo J b

a UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

GaN; InGaN; Piezoelectric field; Quantum confined Stark effect; Quantum well

Indexed keywords

PIEZOELECTRICITY; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

SCREENING EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036814905 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l1093 Document Type: Article

Times cited : (18)

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