Effect of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 85-90

  Dhar, S ^a   Jahn, U ^a   Brandt, O ^a   Waltereit, P ^b   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON TRANSITIONS; EXCITONS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; POISSON EQUATION; QUANTUM EFFICIENCY; WAVE EQUATIONS;

TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036650209     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<85::AID-PSSA85>3.0.CO;2-R     Document Type: Conference Paper

References (15)