Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 145-150

  Potin, V ^a   Hahn, E ^a   Rosenauer, A ^a   Gerthsen, D ^a   Kuhn, B ^b   Scholz, F ^b   Dussaigne, A ^c   Damilano, B ^c   Grandjean, N ^c  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c CRHEA CNRS   (France)

Author keywords

A1. Metalorganic vapor phase epitaxy; A1. Phase separation; A1. Segregation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B2. Nitrides

Indexed keywords

AGGLOMERATION; CHARGE COUPLED DEVICES; COMPUTER SIMULATION; CRYSTAL LATTICES; DESORPTION; ELECTRON BEAMS; FINITE ELEMENT METHOD; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; PHASE SEPARATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMOCOUPLES;

PHASE SEPERATION EFFECTS; POLARITY;

INDIUM COMPOUNDS;

EID: 0842308464     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.082     Document Type: Article

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