Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 94-97

  Pecharroman Gallego R ^a   Edwards, P R ^a   Martin, R W ^a   Watson, I M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Huang Rhys parameter; InGaN; Nitride semiconductors; Optical properties; Phonons

Indexed keywords

EXCITONS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

PHONON SIDEBANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037198557     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00024-7     Document Type: Conference Paper

References (9)

1. Gallium nitride and related semiconductors