Prospect for III-Nitride heterojunction MOSFET structures and devices

Materials Research Society Symposium Proceedings

Volumn 829, Issue , 2005, Pages 301-312

  Johnson, M A L ^a   Barlage, D W ^a   Braddock, Dave ^b  

^a North Carolina State University   (United States)

^b OSEMI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD GEOMETRY; EPITAXIAL DEPOSITION; GADOLINIUM GALLIUM OXIDE (GGO); HETEROJUNCTION FIELD EFFECT TRANSISTION (HFET);

DIELECTRIC DEVICES; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; NITRIDES; PASSIVATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; WIRELESS TELECOMMUNICATION SYSTEMS;

MOSFET DEVICES;

EID: 20344364145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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