Application of GaN-based heterojunction FETs for advanced wireless communication

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 517-523

  Ohno, Y ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Gallium nitride; HFET; High power; High voltage; Maxwell Boltzmann distribution; Sapphire substrate; Silicon carbide substrate; Wide bandgap

Indexed keywords

ELECTRIC POTENTIAL; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON CARBIDE; SUBSTRATES; WIRELESS TELECOMMUNICATION SYSTEMS;

CARRIER VELOCITY; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MAXWELL-BOLTZMANN DISTRIBUTION; SAPPHIRE SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 0035279281     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906445     Document Type: Article

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