A critical comparison between movpe and mbe growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Johnson, M A L ^a,b   Yu, Zhonghai ^a   Brown, J D ^a   Koeck, F A ^a   El Masry, N A ^b   Kong, H S ^c   Edmond, J A ^c   Cook Jr , J W ^a   Schetzina, J F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442876219     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003100     Document Type: Conference Paper

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