GaAs surface passivation using in-situ oxide deposition

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 441-447

  Passlack, M ^a,b   Hong, M ^a   Opila, R L ^a   Mannaerts, J P ^a   Kwo, J R ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); OXIDES; PASSIVATION; SURFACE PROPERTIES;

OXIDE DEPOSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030234121     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00184-5     Document Type: Article

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