A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 182-191

  Gila, B P ^a   Lee, K N ^a   Johnson, W ^b   Ren, F ^b   Abernathy, C R ^a   Pearton, S J ^a   Hong, M ^c   Kwo, J ^c   Mannaerts, J P ^c   Anselm, K A ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRON BEAM EVAPORATION; GADOLINIUM OXIDE; GALLIUM GADOLINIUM OXIDE;

MOSFET DEVICES;

EID: 0034593903     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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