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Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 85-88

Positive charging of thermal SiO2 layers: Hole trapping versus proton trapping

(3) Afanas'ev, V V a Adriaenssens, G J a Stesmans, A a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

Charge injection; Hydrogen liberation; Oxide charging; Protons; SiO2 defects

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC CHARGE; HOLE TRAPS; PARAMAGNETIC RESONANCE; PROTONS;

CHARGE INJECTION;

SILICA;

EID: 0035498721 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(01)00651-7 Document Type: Conference Paper

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.