Model for defect generation at the (1 0 0)Si/SiO 2 interface during electron injection in MOS structures

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 749-752

  Houssa, M ^a   Autran, J L ^a   Heyns, M M ^b   Stesmans, A ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Defect generation; Interface dipole moment; Metal oxide semiconductor (MOS) structures

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; DISSOCIATION; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); SILICA;

ELECTRON INJECTION;

MOS DEVICES;

EID: 0037872139     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00042-4     Document Type: Conference Paper

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