Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 738-742

  Harding, R ^a   Davies, G ^a   Coleman, P G ^b   Burrows, C P ^b   Wong Leung, J ^c  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b University of Bath   (United Kingdom)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Ion implantation; PAS; Photoluminescence; Silicon

Indexed keywords

ANNEALING; ENERGY TRANSFER; ION IMPLANTATION; LASER APPLICATIONS; PHONONS; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; QUENCHING; RADIATION DAMAGE; SILICON;

DIVACANCIES; LASER PENETRATION DEPTH; TRANSIENT ENHANCED DIFFUSION (TED);

CRYSTAL DEFECTS;

EID: 0347764762     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.152     Document Type: Conference Paper

References (10)

1. Cowern N.E.B., et al. Phys. Rev. Lett. 82:1999;4460.
2. Knights A.P., Coleman P.G. Defect and Diffusion Forum. 183-185:2000;41.
3. Ziegler J.F., Biersack J.P., Littmark U. Ziegler J.F. The Stopping and Range of Ions in Solids. Vol. 1:1985;Pergamon, New York. (For program download see www.srim.org ).
4. P.J. Schultz, G.R. Massoumi, P.J. Simpson, AIP Conference Proceedings, New York, Vol. 218, 1990, p. 171.
5. Knights A.P., Malik F., Coleman P.G. Appl. Phys. Lett. 75:1999;466.
6. Davies G., et al. J. Phys. C. 20:1987;191.
7. Dexter D.L. J. Chem. Phys. 21:1953;836.
8. Pellegrino P., et al. Phys. Rev. B. 64:2001;195211.
9. Schmidt D.C., et al. J Appl. Phys. 88:2000;2309.
10. Fatima S., Wong-Leung J., Fitz Gerald J., Jagadish C. Appl. Phys. Lett. 72:1988;3044.