Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2309-2317

  Schmidt, D C ^a   Svensson, B G ^a   Seibt, M ^b   Jagadish, C ^c   Davies, G ^d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000292577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1288020     Document Type: Article

References (34)

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