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Volumn 89, Issue 8, 2001, Pages 4310-4317

Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035871048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1357464     Document Type: Article
Times cited : (11)

References (42)
  • 25
    • 0033335192 scopus 로고    scopus 로고
    • G. Davies, E. C. Lightowlers, and Z. E. Ciechanowska, J. Phys.: Condens. Matter 20, 191 (1997); H. Feick and E. R. Weber, Physica B 273, 497 (1999).
    • (1999) Physica B , vol.273 , pp. 497
    • Feick, H.1    Weber, E.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.