Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 734-737

  Giri, P K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

Defects; Interstitial cluster; Photoluminescence; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HIGH ENERGY PHYSICS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MOLECULAR ORIENTATION; RADIATION DAMAGE; SILICON; SILICON WAFERS;

INTERSTITIAL CLUSTERS; PRECURSORS;

PHOTOLUMINESCENCE;

EID: 0347764766     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.107     Document Type: Conference Paper

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