Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1223-1232

  Kalna, K ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Double delta doping; Monte Carlo simulation; Pseudomorphic HEMT; Scaling; Transconductance

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; ENERGY GAP; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DOUBLE DELTA DOPING; PSEUDOMORPHIC HEMT; SCALING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1842832720     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.008     Document Type: Article

References (44)

1. T of 562 GHz IEEE Electron Device Lett. 23:2002;573-575.
2. Suemitsu T., Yokoyama H., Ishii T., Enoki T., Meneghesso G., Zanoni E. 30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs. IEEE Trans. Electron Devices. 49:2002;1694-1700.
3. Shinohara K., Yamashita Y., Endo A., Hikosara K., Matsui T., Mimura T., et al. Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency. Jpn. J. Appl. Phys. 41:2002;L437-L439.
4. Kalna K., Roy S., Asenov A., Elgaid K., Thayne I. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electron. 46:2002;631-638.
5. Kalna K., Asenov A., Elgaid K., Thayne I. Scaling of pHEMTs to decanano dimensions. VLSI Design. 13:2001;435-439.
6. Kizilyalli I.C., Hess K., Larson J.L., Widinger J.D. Scaling properties of high electron mobility transistors. IEEE Trans. Electron Devices. 33:1986;1427-1433.
7. Dollfus P., Bru C., Hesto P. Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: physical limitations at ultrashort gate length. J. Appl. Phys. 73:1993;804-812.
8. Hur K.Y., Hetzler K.T., McTaggart R.A., Vye D.W., Lemonias P.J., Hoke W.E. Ultralinear double pulse doped AlInAs/GaInAs/InP HEMTs. Electron. Lett. 32:1996;1516-1518.
9. Hur K.Y., Hetzler K.T., McTaggart R.A., Lemonias P.J., Hoke W.E. Effect of channel thickness on linearity of double pulse doped AlInAs/GaInAs/InP HEMTs. Electron. Lett. 33:1997;331-332.
10. 0.51P/InGaAs single and double-doped pseudomorphic high electron mobility transistors. Solid-State Electron. 45:2001;309-314.
11. Sexl M., Böhm G., Xu D., Heiß H., Kraus S., Tränkle G., et al. MBE growth of double-sided doped InAlAs/InGaAs HEMTs with an InAs layer inserted in the channel. J. Cryst. Growth. 175/176:1997;915-918.
12. Sleinam A., Di Carlo A., Lugli P., Zandler G. Breakdown quenching in high electron mobility transistors by using body contact. IEEE Trans. Electron Devices. 48:2001;2188-2191.
13. Canali C., Paccagnella A., Pisoni P., Tedesco C., Relaroli P., Zanoni E. Impact ionization phenomena in AlGaAs/GaAs HEMTs. IEEE Trans. Electron Devices. 38:1991;2571-2573.
14. Li H.P., Hartin O.L., Ray M. An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs. IEEE Trans. Electron Devices. 49:2002;1675-1678.
15. Somerville M.H., Putnam C.S., del Alamo J.A. Determining dominant breakdown mechanisms in InP HEMTs. IEEE Electron Device Lett. 22:2001;565-567.
16. Babiker S., Asenov A., Roy S., Beaumont S.P. Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study. Solid-State Electron. 43:1999;1281-1288.
17. Babiker S., Asenov A., Barker J.R., Beaumont S.P. Finite element Monte Carlo simulation of recess gate compound FETs. Solid-State Electron. 39:1996;629-635.
18. Stobbe M., Redmer R., Schattke W. Impact ionization rate in GaAs. Phys. Rev. B. 49:1994;4494-4500.
19. Harrison D., Abram R.A., Brand S. Characteristics of impact ionization rates in direct and indirect gap semiconductors. J. Appl. Phys. 85:1999;8186-8192.
20. 0.43As. Phys. Rev. B. 63:2001;115209-1-115209-8.
21. Fischetti M.V., Laux S.E. Monte-Carlo electron transport in small semiconductor devices including band-structure and space-charge effects. Phys. Rev. B. 38:1988;9721-9745.
22. Wordelman CJ. 3-D granular Monte Carlo simulations of semiconductor devices. PhD thesis. Urbana, IL; 2000. p. 13.
23. 1-x)As. J. Appl. Phys. 41:1970;4743-4744.
24. Law H.D., Lee C.A. Interband scattering effects on secondary ionization coefficients in GaAs. Solid-State Electron. 21:1978;331-340.
25. Pearsall T.P., Capasso F., Nahory R.E., Pollack M.A., Chelikowsky J.R. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs. Solid-State Electron. 21:1978;297-302.
26. Fischetti M.V. Monte Carlo simulations in technologically significant semiconductors of the diamond and zinc-blende structures-part I: homogeneous transport. IEEE Trans. Electron Devices. 38:1991;634-648.
27. 0.53As heterojunction bipolar transistors. Appl. Phys. Lett. 60:1992;3150-3152.
28. 0.47As. Appl. Phys. Lett. 36:1980;218-220.
29. Kalna K, Asenov A, Elgaid K, Thayne I. Effect of impact ionization in scaled pHEMTs. In: Thayne I, editor. Proc. EDMO 2000. Glasgow; 2000. p. 236-41.
30. Bude J., Hess K. Thresholds of impact ionization in semiconductors. J. Appl. Phys. 72:1992;3554-3561.
31. Roy D.K. Quantum mechanical tunnelling and its applications. 1986;World Scientific, New York. p. 17.
32. Singh J. Semiconductor devices: basic principles. 2001;John Wiley, New York. p. 514.
33. Winstead B., Ravaioli U. Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique. IEEE Trans. Electron Devices. 47:2000;1241-1246.
34. Foisy M.C., Tasker P.J., Hughes B., Eastman L.F. The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET. IEEE Trans. Electron Devices. 35:1988;871-878.
35. Babiker S., Asenov A., Cameron N., Beaumont S.P. A simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs. IEEE Trans. Electron Devices. 43:1996;2032-2034.
36. Mateos J., Gonzáles T., Pardo D., Hoel V., Cappy A. Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. Microelectron Reliab. 41:2001;73-77.
37. .48As technology using a non-annealed ohmic contact strategy. In: Franca J, Freitas P, editors. Proc. 33rd European Solid-State Device Research Conference (ESSDERC). Estoril; 2003. p. 315-8.
38. Canali C., Pavan P., Di Carlo A., Lugli P., Malik R., Manfredi M., et al. Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's. IEEE Trans. Electron Devices. 43:1996;1769-1777.
39. Di Carlo A., Rossi L., Lugli P., Zandler G., Meneghesso G., Jackson M., et al. Monte Carlo study of the dynamic breakdown effects in HEMT's. IEEE Electron Device Lett. 21:2000;149-151.
40. Moglestue C. Monte Carlo simulation of semiconductor devices. 1993;Chapman & Hall, London. p. 188.
41. Kalna K., Asenov A. Gate tunnelling and impact ionisation in sub-100 nm PHEMTs. IEICE Trans. Electron. E86-C:2003;330-335.
42. Li H.P., Hartin O.L., Ray M. An updated temperature-dependent coupling model including both impact ionization and tunnelling mechanisms for AlGaAs/InGaAs HEMTs. IEEE Trans. Electron Devices. 49:2002;1675-1678.
43. Rotondaro A.L.P., Visokay M.R., Shanware V.A., Chambers J.J., Colombo L. Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain. IEEE Electron Device Lett. 10:2002;603-605.
44. Chelikowsky J.R., Cohen M.L. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B. 14:1976;556-582.