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VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 435-439

Scaling of pHEMTs to decanano dimensions

(4) Kalna, K a Asenov, A a Elgaid, K a Thayne, I a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

Monte Carlo simulation; pHEMT; Roadmap; Scaling; Transconductance

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

MONTE CARLO DEVICE SIMULATORS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035692855 PISSN: 1065514X EISSN: None Source Type: Journal
DOI: 10.1155/2001/19759 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.