Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 631-638

  Kalna, K ^a   Roy, S ^a   Asenov, A ^a   Elgaid, K ^a   Thayne, I ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Monte Carlo simulation; Pseudomorphic high electron mobility transistors; RF analysis; Scaling; Transconductance

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; FINITE ELEMENT METHOD; MONTE CARLO METHODS; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

DECANANO DIMENSIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036568336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00331-8     Document Type: Article

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