Self-aligned 0.12μm T-gate In.53Ga.47As/In.52A1.48As HEMT technology utilising a non-annealed ohmic contact strategy

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 315-318

  Moran, D A J ^a   Kalna, K ^a   Boyd, E ^a   McEwan, F ^a   McLelland, H ^a   Zhuang, L L ^a   Stanley, C R ^a   Asenov, A ^a   Thayne, I ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HEMT TECHNOLOGIES; SELF-ALIGNED;

EID: 84907687310     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256877     Document Type: Conference Paper

References (9)

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