Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 73-77

  Mateos, Javier ^a   González, Tomás ^a   Pardo, Daniel ^a   Hoel, Virginie ^b   Cappy, Alain ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

ENERGY QUANTIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0343338335     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00211-0     Document Type: Article

References (7)

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2. Nguyen L.D., Brown A.S., Thompson M.A., Jelloian L.M. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors. IEEE Trans Electron Dev. 39:1992;2007.
3. Mateos J, González T, Pardo D, Hoel V, Happy H, Cappy A. Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs. IEEE Trans. Electron Devices, 2000;47:250.
4. Mateos J., González T., Pardo D., Tadyszak P., Danneville F., Cappy A. Noise analysis of 0.1. μ m gate MESFETs and HEMTs Solid-State Electron. 42:1998;79.
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7. Mateos J., González T., Pardo D., Tadyszak P., Danneville F., Cappy A. Noise and transit time in ungated FET structures. IEEE Trans Electr Dev. 44:1997;2128.