Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1281-1288

  Babiker, S ^a   Asenov, A ^a   Roy, S ^a   Beaumont, S P ^a  

^a U   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; ENERGY GAP; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN;

STRAIN ENGINEERING; STRAIN RELIEF GRADED BUFFERS; VIRTUAL SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032650215     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00067-2     Document Type: Article

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