Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Solid-State Electronics

Volumn 45, Issue 2, 2001, Pages 309-314

  Lin, Kun Wei ^a   Yu, Kuo Hui ^a   Chang, Wen Lung ^a   Cheng, Chin Chuan ^a   Lin, Kuan Po ^a   Yen, Chih Hung ^a   Lour, Wen Shiung ^b   Liu, Wen Chau ^a  

^a Department of Electrical Engineering   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

CARRIER CONFINEMENT; HIGH CURRENT DRIVABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035247262     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00005-3     Document Type: Article

References (17)

1. Kuo T.Y., Cunningham J.E., Schubert E.F., Tsang W.T., Chiu T.H., Ren F., Fonstad C.G. J Appl Phys. 64:1988;3324.
2. Hong W.P., Harbison J., Florez L., Abeles J.H. IEEE Electron Dev Lett. 10:1989;310.
3. Wu C.L., Hsu W.C. IEEE Trans Electron Dev. 43:1996;207.
4. Chan Y.J., Yeh T.J., Kuo J.M. IEE Electron Lett. 30:1994;1094.
5. Hsu W.C., Wu C.L., Tsai M.S., Chang C.Y., Liu W.C., Shieh H.M. IEEE Trans Electron Dev. 42:1995;804.
6. Pereiaslavets B., Bachem K.H., Braunstein J., Esatman L.F. IEEE Trans Electron Dev. 43:1996;1659.
7. Galderon L., Liu Y., Shen H., Pamlapati J., Dutta M., Chang W.H., Yang L.W., Wright P.D. Appl Phys Lett. 60:1992;1597.
8. Ginoudi A, Paloura E, Costandinidies G, Garcia JC, Maurel P, 4th International Conference on Indium Phosphide and related materials, 1992, p. 389.
9. Laih L.W., Cheng S.Y., Wang W.C., Lin P.H., Chen J.Y., Liu W.C., Lin W. IEE Electron Lett. 33:1997;98.
10. Lour W.S., Chang W.L., Shih Y.M., Liu W.C. IEEE Electron Dev Lett. 20:1999;304.
11. Shealy J.B., Hashemi M.M., Kiziloglu K., Denbaars S.P., Mishra U.K., Liu T.K., Brown J.J., Lui L. IEEE Electron Dev Lett. 14:1993;544.
12. Yang M.T., Chang Y.J. IEEE Trans Electron Dev. 43:1996;1173.
13. Nahory R.E., Pollack M.A., Johnston J., Barns R.L. Appl Phys Lett. 33:1978;659.
14. Lin Y.S., Lu S.S., Sun T.P. IEEE Electron Dev Lett. 16:1995;518.
15. Liu W.C., Laih L.W., Lour W.S., Tsai J.H., Lin K.W., Cheng C.C. IEEE J Quant Electron. 32:1996;1615.
16. Lai R., Wojtowicz M., Chen C.H., Biedenbender M., Yen H.C., Streit D.C., Tan K.L., Liu P.H. IEEE Microwave Guide Lett. 3:1993;363.
17. Hsu W.C., Shieh H.M., Wu C.L., Wu T.S. IEEE Trans Electron Dev. 41:1994;456.