Finite element Monte Carlo simulation of recess gate compound FFTs

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 629-635

  Babiker, S ^a   Asenov, A ^a   Barker, J R ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; FINITE ELEMENT METHOD; GATES (TRANSISTOR); GEOMETRY; HETEROJUNCTIONS; HOT CARRIERS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

FINITE ELEMENT DISCRETIZATION; GALERKIN METHOD; HOT CARRIER TRANSPORT; POISSON EQUATION; SEMICONDUCTOR DEVICE PARASITICS; SINGLE PROGRAMME MULTIPLE DATA; TWO DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 0030151119     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00185-9     Document Type: Article

References (24)

1. R. Hockney and J. Eastwood, Computer Simulation using Particles. Adam Hilger, Bristol, New York (1988).
2. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Springer-Verlag, Wien, New York (1989).
3. P. Price, Semiconductors Seminmet. 14, 249 (1979).
4. C. Moglestue, IEEE Trans. Electron Devices ED-32, 2090 (1985).
5. U. Ranawake, C. Huster, P. Lenders and S. Goodnick, IEEE Trans. Electron Devices ED-13, 712 (1994).
6. C. Williams, T. Gibson, J. Hauser, M. Littlejohn and M. Abusiad, Solid-St. Electron. 28, 1105 (1985).
7. I. Kizilyalli, M. Artaki, N. Shah and A. Chandra, IEEE Trans. Electron Devices ED-40, 234 (1993).
8. I. Kilzilyalli, M. Artaki and A. Chandra, IEEE Trans. Electron Devices, ED-38, 197 (1991).
9. G. Jensen, B. Lund, T. Fjeldley and M. Shur, IEEE Trans. Electron Devices ED-38, 840 (1991).
10. D. Park and K. Brennan, IEEE Trans. Electron Devices ED-36, 1254 (1989).
11. D. Park and K. Brennan, IEEE Trans. Electron Devices ED-37, 618 (1990).
12. N. Cameron, S. Ferguson, M. Taylor, S. Beaumont, M. Holland, C. Tronche, M. Soulard and P. Ladbrooke, J. Vac. Sci. Technol. 11, 2244 (1993).
13. J. Huang, P. Saledas, J. Wendler, A. Platzker, W. Boulais, S. Shanfield. W. Hoke, P. Lyman, L. Aucoin, A. Miquelarena, C. Bedard and D. Atwood, IEEE Trans. Electron Devices ED-14, 456 (1993).
14. A. Asenov, N. Cameron, M. Taylor, S. Beaumont and J. Barker, Proc. European Gallium Arsenide and Related III-V Compounds Applications Symp. Italy (1994).
15. F. Venturi, R. Smith, E. Sangiorgi, M. Pinto and B. Ricco, IEEE Trans. CAD 8, 360 (1989).
16. A. Asenov, D. Reid, J. Barker, N. Cameron and S. Beaumont, in Simulation of Semiconductor Devices and Processes (Edited by S. Selberherr, H. Stippel and E. Strasser), p. 265. Springer-Verlag, Wien (1993).
17. A. Asenov, D. Reid, J. Barker, N. Cameron and S. Beaumont, Proc. Int. Workshop on Computational Electronics, Leeds University Press, p. 45 (1993).
18. J. Barker, A. Asenov, A. Brown, J. Cluckie, S. Babiker and C. Arokianathan, in Massively Parallel Processing Applications and Development (Edited by L. Dekker, W. Smith and J. Zuidervaat), p. 683. Springer-Verlag, Wien (1994).
19. J. Whiteman, The Mathematics of Finite Elements and Applications. Academic Press, London (1975).
20. Y. Tang, IEEE. Trans. Electron Devices ED-31, 1969 (1984).
21. K. Brieger, W. Gerlach and J. Pelka, IEEE Trans. Electron Devices ED-31, 733 (1984).
22. A. Asenov, S. Babiker, N. Cameron, S. Beaumont and J. Barker, Colloq. on Phys. Modelling of Semiconductor Devices, IEE Digest No. 1995/064 (1995).
23. S. Sze, Semiconductor Devices, Physics and Tecknology. John Wiley & Sons, New York (1985).
24. E. Heliodore, M. Lefebreve, G. Salmer and O. Elsayed, IEEE Trans. Electron Devices ED-35, 824 (1988).