Characteristics of impact ionization rates in direct and indirect gap semiconductors

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8186-8192

  Harrison, D ^a   Abram, R A ^a   Brand, S ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; IMPACT IONIZATION; MATRIX ALGEBRA; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS;

CONSTANT MATRIX APPROXIMATION; DIRECT GAP SEMICONDUCTORS; INDIRECT GAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0032606412     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370658     Document Type: Article

References (30)

1. S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, New York, 1985), Chap. 3.
2. M. H. Somerville, J. A. del Alamo, and W. Hoke, IEEE Electron Device Lett. 17, 473 (1996).
3. H. Mizuno, M. Morifuji, K. Taniguchi and C. Hamaguchi, J. Appl. Phys. 74, 1100 (1993).
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
5. G. E. Stillman and C. M. Wolf, Infrared Detectors II, Semiconductors and Semimetals, Vol. 12 (Academic, New York, 1977), Chap. 5.
6. F. Capasso, Lightwave Communications Technology, Semiconductors and Semimetals, Vol. 22 (Academic, New York, 1985), Chap. 1.
7. H. Shichijo and K. Hess, Phys. Rev. B 23, 4197 (1981).
8. N. Sano, M. Tomizawa, and A. Yoshii, Appl. Phys. Lett. 56, 653 (1990).
9. N. Sano, T. Aoki, M. Tomizawa, and A. Yoshii, Phys. Rev. B 41, 12122 (1990).
10. J. Bude and K. Hess, J. Appl. Phys. 72, 3554 (1992).
11. V. Chandramouli and C. M. Maziar, Solid-State Electron. 36, 285 (1993).
12. J. Kolník, Y. Wang, I. H. Oǧuzman, and K. F. Brennan, J. Appl. Phys. 76, 3542 (1994).
13. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno, M. Morifuji, and C. Hamaguchi, J. Appl. Phys. 75, 297 (1994).
14. I. H. Oǧuzman, Y. Wang, J. Kolník, and K. F. Brennan, J. Appl. Phys. 77, 225 (1995).
15. P. T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991).
16. A. R. Beanie and P. T. Landsberg, Proc. R. Soc. London, Ser. A 249, 16 (1959).
17. J. R. Chelikowski and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
18. J. P. Walter and M. L. Cohen, Phys. Rev. B 5, 3101 (1972).
19. D. Harrison, R. A. Abram, and S. Brand, J. Appl. Phys. 85, 8178 (1999), preceding paper.
20. E. O. Kane, Phys. Rev. 159, 624 (1967).
21. Y. Kamakura, H. Mizuno, M. Yamaji, M. Morifuji, K. Taniguchi, C. Hamaguchi, T. Kunikiyo, and M. Takenaka, J. Appl. Phys. 75, 3500 (1994).
22. T. Kunikiyo, M. Takenaka, M. Morifuji, K. Taniguchi, and C. Hamaguchi, J. Appl. Phys. 79, 7718 (1996).
23. N. Sano and A. Yoshii, J. Appl. Phys. 77, 2020 (1995).
24. J. Allam, Jpn. J. Appl. Phys., Part 1 36, 1529 (1997).
25. L. V. Keldysh, Sov. Phys. JETP 10, 509 (1960).
26. N. Sano, T. Aoki, and A. Yoshii, Appl. Phys. Lett. 55, 1418 (1989).
27. M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966).
28. C. L. Anderson and C. R. Crowell, Phys. Rev. B 5, 2267 (1972).
29. A. R. Beattie, Semicond. Sci. Technol. 7, 401 (1992).
30. S. P. Wilson, S. Brand, A. R. Beattie, and R. A. Abram, Semicond. Sci. Technol. 8, 1546 (1993).