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Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 370-374

Design of edge termination for GaN power Schottky diodes

(6) Laroche, J R a Ren, F a Baik, K W a Pearton, S J a Shelton, B S b Peres, B b

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b EMCORE CORPORATION (United States)

Author keywords

Breakdown voltage; GaN; Schottky diode

Indexed keywords

CURRENT DENSITY; DATA REDUCTION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC VEHICLES; ION IMPLANTATION; SCHOTTKY BARRIER DIODES;

AVALANCHE BREAKDOWN; EDGE-DETERMINATION METHODS; OVERLAP TERMINATION; SWITCHING SPEED;

GALLIUM NITRIDE;

EID: 18244393437 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-005-0113-6 Document Type: Conference Paper

Times cited : (45)

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