Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 150-154

  Fujihira, Keiko ^b   Tamura, Santoshi ^b,c   Kimoto, Tsunenobu ^b   Matsunami, Hiroyuki ^a,b  

^a IEEE

^b KYOTO UNIVERSITY   (Japan)

^c PANASONIC CORPORATION   (Japan)

Author keywords

Minority carrier lifetime; On resistance; P i n diode; Power device; SiC

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FERMI LEVEL; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

HORIZONTAL COLD-WALL CHEMICAL VAPOR DEPOSITION; MINORITY CARRIER LIFETIME; ON-RESISTANCE;

SEMICONDUCTOR DIODES;

EID: 0036256816     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974762     Document Type: Article

References (17)

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4. A 4.5 kV 6H silicon carbide rectifier
5. Performance limiting surface defects in SiC epitaxial p-n junction diodes
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7. Switching behavior of fast high-voltage SiC p-n diodes
8. 6.2 kV 4H-SiC p-i-n diode with low forward voltage drop
9. High-voltage SiC diodes with small recovery time
10. Step-controlled epitaxial growth of SiC: High-quality homoepitaxy
11. + n diodes measured by reverse recovery switching transient analysis