Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 430-438

  Tian, Z ^a   Quick, N R ^b   Kar, A ^a  

^a University of Central Florida   (United States)

^b AppliCote Associates LLC   (United States)

Author keywords

Laser doping; Lattice defect; PIN diode; Silicon carbide

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SILICON CARBIDE;

ELECTRONICS APPLICATIONS; LASER DOPING; LATTICE DEFECT GENERATION; PIN DIODE;

SEMICONDUCTOR DIODES;

EID: 18144366242     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0123-4     Document Type: Conference Paper

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