Laser technology for submicron-doped layers formation in semiconductors

Optics and Laser Technology

Volumn 33, Issue 8, 2001, Pages 589-591

  Bonchik, A Yu ^a   Kijak, S G ^a   Gotra, Z ^b   Proszak, W ^b  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

^b RZESZOW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Cold diffusion; Doping; Laser; Semiconductor; Solid phase diffusion

Indexed keywords

CARRIER CONCENTRATION; PROFILOMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS;

ELECTROCHEMICAL PROFILOMETER;

LASER APPLICATIONS;

EID: 0035498918     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-3992(01)00072-X     Document Type: Article

References (6)

1. Laser solid phase doping of silicon
2. Formation of p-n junctions and Ohmic contacts with GaAs by laser solid-phase diffusion
3. Laser solid-phase modification of Semiconductors
4. Laser solid phase alloying of InP