Electrical characteristics of present-day manufactured power semiconductor pn junctions and the I-V characteristic theory

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2003, Pages 253-256

  Obreja, V V N ^a   Nuttall, K I ^b   Buiu, O ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Breakdown voltage; Electric variables; Glass manufacturing; Leakage current; Power engineering and energy; Research and development; Semiconductor device manufacture; Silicon; Temperature dependence; Virtual reality

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; INDUSTRIAL RESEARCH; LEAKAGE CURRENTS; MANUFACTURE; SECONDARY RECOVERY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON; TEMPERATURE DISTRIBUTION; VIRTUAL REALITY;

ELECTRIC VARIABLES; GLASS-MANUFACTURING; POWER ENGINEERING AND ENERGIES; RESEARCH AND DEVELOPMENT; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR JUNCTIONS;

EID: 3843106109     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2003.1252429     Document Type: Conference Paper

References (9)

1. th International Power Electronics Conference, Nuremberg, May, 2003.
2. V. Obreja, "On the Leakage Current of Present-Day Manufactured Semiconductor Junctions", Solid-State Electronics, vol.44, No.1, pp. 49-57, 2000.
3. V. Obreja, "Experiments on the surface peripheral leakage current of a silicon PN junction", Proceedings CAS 1993.
4. V. Obreja, Channel currents in silicon PN junctions, Proceedings CAS 1993.
5. th, CAS '2002.
6. th European Power Electronics and Applications Conference (EPE2003), September, Toulouse, France, 2003.
7. V. Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions" IEEE Transactions on Electron Devices, vol.49, No.1, pp.155-163, 2002.
8. th European Conference on Power Electronics and Applications (EPE97; Sept., Trondheim-Norway, 1997.
9. V. Obreja, Gh. Dinoiu, E. Lakatos, Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon PN junctions, Proceedings CAS, pp. 293-296, 1998.