Damage annealing and dopant activation in Al ion implanted α-SiC

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 267-270

  Canut, B ^a   Ramos, S ^a   Roger, J A ^a   Chante, J P ^b   Locatelli, M L ^b   Planson, D ^b  

^a UNIVERSITÉ LYON 1   (France)

^b CNRS   (France)

Author keywords

Aluminium ions; Annealing temperatures; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL ACTIVATION; CRYSTAL LATTICES; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

RUTHERFORD BACKSCATTERING SPECTROMETRY/CHANNELING GEOMETRY (RBS/C);

SILICON CARBIDE;

EID: 0042878086     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01986-1     Document Type: Article

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