An experimental investigation on the nature of reverse current of silicon power pn-junctions

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 155-163

  Obreja, Vasile V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

High temperature; High voltage; Junction passivation; Leakage current; Semiconductor device

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON IRRADIATION; GOLD; HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

ELECTRON IRRADIATED JUNCTION; GOLD-DOPED JUNCTION; HIGH VOLTAGE; JUNCTION PASSIVATION; REVERSE LEAKAGE CURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0036256936     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1291850     Document Type: Article

References (14)

1. Analysis of bulk reverse current in diffused silicon power rectifiers
2. Double positive beveling a better edge contour for high-voltage devices
3. High-voltage thyristors and diodes made of neutron irradiated silicon
4. 4 passivation of high-power rectifiers
5. 2 layers as used for passivation of silicon power devices
6. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
7. Depletion layer characteristics at the surface of beveled high-voltage pn-junctions
8. The effect of charge in junction termination extention passivation dielectrics
9. Dynamic avalanche in 3.3 kV Si power diodes
10. An analysis and improvement of destruction immunity during reverse recovery for high-voltage planar diodes under high dIrr/dt condition
11. On the leakage current of present-day manufactured semiconductor junctions
12. Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon pn-junctions
13. On the nature of leakage current of silicon fast recovery rectifiers
14. Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide