Al, B, and Ga ion-implantation doping of SiC

Journal of Electronic Materials

Volumn 29, Issue 11, 2000, Pages 1340-1345

  Handy, Evan M ^a   Rao, Mulpuri V ^a   Holland, O W ^b   Chi, P H ^c   Jones, K A ^d   Derenge, M A ^d   Vispute, R D ^e   Venkatesan, T ^e  

^a George Mason University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

^e Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CAPACITANCE MEASUREMENT; HALL EFFECT; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

ELECTRICAL ACTIVATION;

SILICON CARBIDE;

EID: 0034323868     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0135-z     Document Type: Article

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