Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 1997, Pages 55-58

  Tin, C C ^a   Madangarli, V ^a   Luckowski, E ^a   Casady, J ^a   Isaacs Smith, T ^a   Williams, J R ^a   Johnson, R W ^a   Gradinaru, G ^a   Sudarshan, T S ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ION IMPLANTATION; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

EDGE TERMINATION;

SEMICONDUCTOR DIODES;

EID: 0030660757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)