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Volumn 747, Issue , 2003, Pages 99-111

Atomic structure, band offsets and hydrogen in high K oxide:silicon interfaces

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ATOMIC STRUCTURE; HYDROGEN; PERMITTIVITY; SILICON; STOICHIOMETRY;

EID: 0041519011     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (34)
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    • J Robertson, J Vac Sci Technol B 18 1785 (2000); P W Peacock, J Robertson, J App Phys 92 4712 (2002)
    • (2000) J Vac Sci Technol B , vol.18 , pp. 1785
    • Robertson, J.1
  • 10
    • 79956006409 scopus 로고    scopus 로고
    • S J Wang, C K Ong, S Y Xu, P Chen, W C Tjiu, J W Chai, A C H Huan, W J Yoo, J S Lim, W Feng, W K Choi, App Phys Lett 78 1604 (2001); S Wang, C K Ong, App Phys Lett 80 2541 (2002)
    • (2002) App Phys Lett , vol.80 , pp. 2541
    • Wang, S.1    Ong, C.K.2
  • 19
    • 0021201747 scopus 로고
    • D Cherns, G R Anstis, J L Hutchison, J C H Spence, Philos Mag A 46 849 (1982); 49 165 (1984)
    • (1984) Philos Mag A , vol.49 , pp. 165
  • 21
    • 0026860738 scopus 로고
    • S Satpathy, R M Martin, Phys Rev B 39 8494 (1989); H Fujitani, S Asano, Surf Sci 268 265 (1992)
    • (1992) Surf Sci , vol.268 , pp. 265
    • Fujitani, H.1    Asano, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.