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Volumn 12, Issue 4, 2002, Pages 969-994

Quantum dot infrared detectors and sources

Author keywords

Infrared detectors; Infrared sources; Intersubband devices; Self organized quantum dots

Indexed keywords

BANDWIDTH; COHERENT LIGHT; ELECTRIC CURRENTS; INFRARED DETECTORS; INFRARED IMAGING; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMOMETERS;

EID: 1542579725     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156402001885     Document Type: Article
Times cited : (23)

References (76)
  • 1
    • 0031557568 scopus 로고    scopus 로고
    • Mid-infrared photoconductivity in InAs quantum dots
    • K. W. Berryman, S. A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots", Appl Phys. Lett. 70 (1997) 1861.
    • (1997) Appl Phys. Lett. , vol.70 , pp. 1861
    • Berryman, K.W.1    Lyon, S.A.2    Segev, M.3
  • 2
    • 0001163227 scopus 로고    scopus 로고
    • Far-infrared photoconductivity in self-organized InAs quantum dots
    • J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots", Appl. Phys. Lett. 72 (1998) 2020.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 2020
    • Phillips, J.1    Kamath, K.2    Bhattacharya, P.3
  • 3
    • 21544478481 scopus 로고    scopus 로고
    • Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector
    • S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector", Appl. Phys. Lett. 73 (1998) 963.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 963
    • Kim, S.1    Mohseni, H.2    Erdtmann, M.3    Michel, E.4    Jelen, C.5    Razeghi, M.6
  • 4
    • 0032487186 scopus 로고    scopus 로고
    • Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
    • S. Maimon, E. Finkman, and G. Bahir, "Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors", Appl. Phys. Lett. 73 (1998) 2003.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2003
    • Maimon, S.1    Finkman, E.2    Bahir, G.3
  • 5
    • 0032487211 scopus 로고    scopus 로고
    • Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
    • D. Pan, E. Towe, and S. Kennerly, "Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors", Appl. Phys. Lett. 73 (1998) 1937.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 1937
    • Pan, D.1    Towe, E.2    Kennerly, S.3
  • 6
    • 0000396139 scopus 로고    scopus 로고
    • In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots
    • S. Sauvage, P. Boucaud, J. M. Gérard, and V. Thierry-Mieg, "In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots", Phys. Rev. B 58 (1998) 10562.
    • (1998) Phys. Rev. B , vol.58 , pp. 10562
    • Sauvage, S.1    Boucaud, P.2    Gérard, J.M.3    Thierry-Mieg, V.4
  • 8
    • 0000701339 scopus 로고    scopus 로고
    • Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
    • Q. D. Zhuang, J. M. Li, H. X. Li, Y. P. Zeng, L. Pan, Y. H. Chen, M. Y. Kong, and L. Y. Lin, "Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice", Appl. Phys. Lett. 73 (1998) 3706.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 3706
    • Zhuang, Q.D.1    Li, J.M.2    Li, H.X.3    Zeng, Y.P.4    Pan, L.5    Chen, Y.H.6    Kong, M.Y.7    Lin, L.Y.8
  • 12
    • 0032620077 scopus 로고    scopus 로고
    • Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
    • S. W. Lee, K. Hirakawa, and Y. Shimada, "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures", Appl. Phys. Lett. 75 (1999) 1428.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 1428
    • Lee, S.W.1    Hirakawa, K.2    Shimada, Y.3
  • 13
    • 0000963624 scopus 로고    scopus 로고
    • Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
    • L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter, "Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots", Appl. Phys. Lett. 75 (1999) 3599.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3599
    • Chu, L.1    Zrenner, A.2    Böhm, G.3    Abstreiter, G.4
  • 14
    • 0001175320 scopus 로고    scopus 로고
    • Photovoltaic quantum-dot infrared detectors
    • D. Pan, E. Towe, and S. Kennerly, "Photovoltaic quantum-dot infrared detectors", Appl. Phys. Lett. 76 (2000) 3301.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3301
    • Pan, D.1    Towe, E.2    Kennerly, S.3
  • 16
    • 0000868495 scopus 로고    scopus 로고
    • Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
    • S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, "Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer", Appl. Phys. Lett. 78 (2001) 1023.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1023
    • Wang, S.Y.1    Lin, S.D.2    Wu, H.W.3    Lee, C.P.4
  • 17
    • 0035898429 scopus 로고    scopus 로고
    • High-detectivity, normal-incidence, mid-infrared (λ ≈ 4 μm) InAs/GaAs quantum-dot detector operating at 150 K
    • A. D. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, "High-detectivity, normal-incidence, mid-infrared (λ ≈ 4 μm) InAs/GaAs quantum-dot detector operating at 150 K", Appl. Phys. Lett. 79 (2001) 421.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 421
    • Stiff, A.D.1    Krishna, S.2    Bhattacharya, P.3    Kennerly, S.4
  • 18
    • 0041971221 scopus 로고    scopus 로고
    • Normal-incidence, high-temperature, mid-infrared InAs-GaAs vertical quantum-dot infrared photodetector
    • A. D. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, "Normal-incidence, high-temperature, mid-infrared InAs-GaAs vertical quantum-dot infrared photodetector", IEEE J. Quantum Electron. 37 (2001) 1412.
    • (2001) IEEE J. Quantum Electron. , vol.37 , pp. 1412
    • Stiff, A.D.1    Krishna, S.2    Bhattacharya, P.3    Kennerly, S.4
  • 20
    • 0000161773 scopus 로고    scopus 로고
    • Room-temperature far infrared emission from self-organized InGaAs/GaAs quantum dot laser
    • S. Krishna, O. Qasaimeh, P. Bhattacharya, P. J. McCann, and K. Namjou, "Room-temperature far infrared emission from self-organized InGaAs/GaAs quantum dot laser", Appl. Phys. Lett. 76 (2000) 3355.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3355
    • Krishna, S.1    Qasaimeh, O.2    Bhattacharya, P.3    McCann, P.J.4    Namjou, K.5
  • 21
    • 0034247092 scopus 로고    scopus 로고
    • Room-temperature long-wavelength (λ = 13.3 μm) unipolar quantum dot intersubband laser
    • S. Krishna, P. Bhattacharya, P. J. McCann, and K. Namjou, "Room-temperature long-wavelength (λ = 13.3 μm) unipolar quantum dot intersubband laser", Electron. Lett. 36 (2000) 1550.
    • (2000) Electron. Lett. , vol.36 , pp. 1550
    • Krishna, S.1    Bhattacharya, P.2    McCann, P.J.3    Namjou, K.4
  • 25
    • 0030143645 scopus 로고    scopus 로고
    • The theory of quantum-dot infrared phototransistors
    • V. Ryzhii, "The theory of quantum-dot infrared phototransistors", Semiconductor Sci. Technol. 11 (1996) 759.
    • (1996) Semiconductor Sci. Technol. , vol.11 , pp. 759
    • Ryzhii, V.1
  • 27
    • 0033169430 scopus 로고    scopus 로고
    • Assessment of HgCdTe photodiodes and quantum well infrared photo-conductors for long wavelength focal plane arrays
    • A. Rogalski, "Assessment of HgCdTe photodiodes and quantum well infrared photo-conductors for long wavelength focal plane arrays", Infrared Phys. Technol. 40 (1999) 279.
    • (1999) Infrared Phys. Technol. , vol.40 , pp. 279
    • Rogalski, A.1
  • 28
    • 0004294896 scopus 로고    scopus 로고
    • Gordon and Breach Science Publishers, Australia
    • A. Rogalski, Infrared Detectors, Gordon and Breach Science Publishers, Australia, 2000, pp. 155-650.
    • (2000) Infrared Detectors , pp. 155-650
    • Rogalski, A.1
  • 29
    • 0031083945 scopus 로고    scopus 로고
    • Ultimate performance of infrared photodetectors and figure of merit of detector material
    • J. Piotrowski and W. Gawron, "Ultimate performance of infrared photodetectors and figure of merit of detector material", Infrared Phys. Technol. 38 (1997) 63.
    • (1997) Infrared Phys. Technol. , vol.38 , pp. 63
    • Piotrowski, J.1    Gawron, W.2
  • 30
    • 0027687152 scopus 로고
    • Quantum-well infrared photodetectors
    • B. F. Levine, "Quantum-well infrared photodetectors", J. Appl. Phys. 74 (1993) R1.
    • (1993) J. Appl. Phys. , vol.74
    • Levine, B.F.1
  • 32
    • 0033729466 scopus 로고    scopus 로고
    • Theory, fabrication, and characterization of quantum well infrared photodetectors
    • J. L. Pan and C. G. Fonstad, Jr., "Theory, fabrication, and characterization of quantum well infrared photodetectors", Mater. Sci. Eng. R, Reports: review j. 28 (2000) 65.
    • (2000) Mater. Sci. Eng. R, Reports: Review J. , vol.28 , pp. 65
    • Pan, J.L.1    Fonstad Jr., C.G.2
  • 33
    • 0033730364 scopus 로고    scopus 로고
    • Device physics and state-of-the-art of quantum well infrared photo-detectors and arrays
    • M. Z. Tidrow, "Device physics and state-of-the-art of quantum well infrared photo-detectors and arrays", Mater. Sci. Eng. B 74 (2000) 45.
    • (2000) Mater. Sci. Eng. B , vol.74 , pp. 45
    • Tidrow, M.Z.1
  • 34
    • 0002305529 scopus 로고
    • Intersubband emission from semiconductor superlattices excited by sequential resonant tunneling
    • M. Helm, P. England, E. Colas, F. DeRosa, and S. J. Allen, Jr., "Intersubband emission from semiconductor superlattices excited by sequential resonant tunneling", Phys. Rev. Lett. 63 (1989) 74.
    • (1989) Phys. Rev. Lett. , vol.63 , pp. 74
    • Helm, M.1    England, P.2    Colas, E.3    Derosa, F.4    Allen Jr., S.J.5
  • 35
    • 0005300503 scopus 로고    scopus 로고
    • Room temperature infrared intersubband photoluminescence in GaAs quantum wells
    • S. Sauvage, Z. Moussa, P. Boucaud, and F. H. Julien, "Room temperature infrared intersubband photoluminescence in GaAs quantum wells", Appl. Phys. Lett. 70 (1997) 1345.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1345
    • Sauvage, S.1    Moussa, Z.2    Boucaud, P.3    Julien, F.H.4
  • 36
    • 36448998681 scopus 로고
    • Quantum cascade unipolar intersubband light emitting diodes in the 8-13 μm wavelength region
    • C. Sirtori, F. Capasso, J. Faist, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Quantum cascade unipolar intersubband light emitting diodes in the 8-13 μm wavelength region", Appl. Phys. Lett. 66 (1995) 4.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 4
    • Sirtori, C.1    Capasso, F.2    Faist, J.3    Sivco, D.L.4    Hutchinson, A.L.5    Cho, A.Y.6
  • 39
    • 0028369314 scopus 로고
    • Mid-infrared field-tunable intersubband electroluminescence at room temperature by photon-assisted tunneling in coupled-quantum wells
    • J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, "Mid-infrared field-tunable intersubband electroluminescence at room temperature by photon-assisted tunneling in coupled-quantum wells", Appl. Phys. Lett. 64 (1994) 1144.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1144
    • Faist, J.1    Capasso, F.2    Sirtori, C.3    Sivco, D.4    Hutchinson, A.L.5    Chu, S.-N.G.6    Cho, A.Y.7
  • 42
    • 0001736443 scopus 로고    scopus 로고
    • Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells
    • P. J. McCann, K. Namjou, and X. M. Fang, "Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells", Appl. Phys. Lett. 75 (1999) 3608.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3608
    • McCann, P.J.1    Namjou, K.2    Fang, X.M.3
  • 43
    • 33751145890 scopus 로고
    • Intrinsic mechanism for the poor luminescence properties of quantum-box systems
    • H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems", Phys. Rev. B 44 (1991) 10945.
    • (1991) Phys. Rev. B , vol.44 , pp. 10945
    • Benisty, H.1    Sotomayor-Torres, C.M.2    Weisbuch, C.3
  • 44
    • 21544477864 scopus 로고
    • Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer super-lattices
    • L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. Leroux, "Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer super-lattices", Appl. Phys. Lett. 47 (1985) 1099.
    • (1987) Appl. Phys. Lett. , vol.47 , pp. 1099
    • Goldstein, L.1    Glas, F.2    Marzin, J.Y.3    Charasse, M.N.4    Leroux, G.5
  • 45
    • 0005985335 scopus 로고
    • Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
    • D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces", Appl. Phys. Lett. 63 (1993) 3202.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3202
    • Leonard, D.1    Krishnamurthy, M.2    Reaves, C.M.3    Denbaars, S.P.4    Petroff, P.M.5
  • 49
    • 0001317758 scopus 로고    scopus 로고
    • In-situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs (001)
    • N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, "In-situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs (001)", Appl. Phys. Lett. 68 (1996) 3299.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 3299
    • Kobayashi, N.P.1    Ramachandran, T.R.2    Chen, P.3    Madhukar, A.4
  • 50
    • 0029304474 scopus 로고
    • Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields
    • Q. Xie, P. Chen, A. Kalburge, T. R. Ramachandran, A. Nayfonov, A. Konkar, and A. Madhukar, "Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields", J. Crystal Growth 150 (1995) 357.
    • (1995) J. Crystal Growth , vol.150 , pp. 357
    • Xie, Q.1    Chen, P.2    Kalburge, A.3    Ramachandran, T.R.4    Nayfonov, A.5    Konkar, A.6    Madhukar, A.7
  • 51
    • 0028494161 scopus 로고
    • Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs
    • J. Y. Marzin, J. M. Gerard, A. Izrael, and D. Barrier, "Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs", Phys. Rev. Lett. 73 (1994) 716.
    • (1994) Phys. Rev. Lett. , vol.73 , pp. 716
    • Marzin, J.Y.1    Gerard, J.M.2    Izrael, A.3    Barrier, D.4
  • 52
    • 0028515009 scopus 로고
    • Selective excitation of photo-luminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
    • S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff, "Selective excitation of photo-luminescence and the energy levels of ultrasmall InGaAs/ GaAs quantum dots", Appl. Phys. Lett. 65 (1994) 1388.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 1388
    • Fafard, S.1    Leonard, D.2    Merz, J.L.3    Petroff, P.M.4
  • 53
  • 54
    • 84990717211 scopus 로고
    • InAs/GaAs quantum dots radiative recombination from zero-dimensional states
    • M. Grundmann, "InAs/GaAs quantum dots radiative recombination from zero-dimensional states", Phys. Status Solidi 188 (1995) 249.
    • (1995) Phys. Status Solidi , vol.188 , pp. 249
    • Grundmann, M.1
  • 58
  • 63
    • 0005834097 scopus 로고
    • Vertically self-organized InAs quantum box islands on GaAs (100)
    • Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, "Vertically self-organized InAs quantum box islands on GaAs (100)", Phys. Rev. Lett. 75 (1995) 2542.
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 2542
    • Xie, Q.1    Madhukar, A.2    Chen, P.3    Kobayashi, N.P.4
  • 64
    • 0005580628 scopus 로고    scopus 로고
    • Vertically aligned and electronically coupled growth induced InAs islands in GaAs
    • G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., "Vertically aligned and electronically coupled growth induced InAs islands in GaAs", Phys. Rev. Lett. 76 (1996) 952.
    • (1996) Phys. Rev. Lett. , vol.76 , pp. 952
    • Solomon, G.S.1    Trezza, J.A.2    Marshall, A.F.3    Harris Jr., J.S.4
  • 65
    • 0001328873 scopus 로고    scopus 로고
    • Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
    • H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study", Phys. Rev. B 56 (1996) 4696.
    • (1996) Phys. Rev. B , vol.56 , pp. 4696
    • Jiang, H.1    Singh, J.2
  • 67
    • 0035926607 scopus 로고    scopus 로고
    • Observation of phonon bottleneck in quantum dot electronic relaxation
    • J. Urayama, T. B. Norris, J. Singh, and P. Bhattacharya, "Observation of phonon bottleneck in quantum dot electronic relaxation", Phys. Rev. Lett. 86 (2001) 4930.
    • (2001) Phys. Rev. Lett. , vol.86 , pp. 4930
    • Urayama, J.1    Norris, T.B.2    Singh, J.3    Bhattacharya, P.4
  • 68
    • 36449007871 scopus 로고
    • Noise gain and operating temperature of quantum well infrared photo-detectors
    • H. C. Liu, "Noise gain and operating temperature of quantum well infrared photo-detectors", Appl. Phys. Lett. 61 (1992) 2703.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 2703
    • Liu, H.C.1
  • 69
    • 0342477993 scopus 로고
    • Photoconductive gain and generation-recombination noise in multiple-quantum-well-infrared detectors
    • W. A. Beck, "Photoconductive gain and generation-recombination noise in multiple-quantum-well-infrared detectors", Appl. Phys. Lett. 63 (1993) 3589.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3589
    • Beck, W.A.1
  • 70
    • 0030125910 scopus 로고    scopus 로고
    • Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities
    • J. Singh, "Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities", IEEE Photonics Technol. Lett. 8 (1996) 488.
    • (1996) IEEE Photonics Technol. Lett. , vol.8 , pp. 488
    • Singh, J.1
  • 71
    • 0035473489 scopus 로고    scopus 로고
    • A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots
    • A. Kastalsky, L. E. Vorobjev, D. A. Firsov, V. L. Zerova, and E. Towe, "A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots", IEEE J. Quantum Electron. 37 (2001) 1356.
    • (2001) IEEE J. Quantum Electron. , vol.37 , pp. 1356
    • Kastalsky, A.1    Vorobjev, L.E.2    Firsov, D.A.3    Zerova, V.L.4    Towe, E.5
  • 72
    • 0000568627 scopus 로고    scopus 로고
    • Conduction band spectra in self-assembled InAs/GaAs dots: Comparison of effective mass and an eight-band approach
    • H. T. Jiang and J. Singh, "Conduction band spectra in self-assembled InAs/GaAs dots: Comparison of effective mass and an eight-band approach", Appl. Phys. Lett. 71 (1997) 3239.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 3239
    • Jiang, H.T.1    Singh, J.2
  • 75
    • 0026413729 scopus 로고
    • Micro-Raman spectroscopy for characterization of semiconductor devices
    • G. Abstreiter, "Micro-Raman spectroscopy for characterization of semiconductor devices", Appl. Surface Sci. 50 (1991) 73.
    • (1991) Appl. Surface Sci. , vol.50 , pp. 73
    • Abstreiter, G.1
  • 76
    • 0036536221 scopus 로고    scopus 로고
    • Evaluation of the fundamental properties of quantum dot infrared detectors
    • to be published
    • J. Phillips, "Evaluation of the fundamental properties of quantum dot infrared detectors", to be published in J. Appl. Phys. 91 (2002).
    • (2002) J. Appl. Phys. , vol.91
    • Phillips, J.1


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