High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 421-423

  Stiff, A D ^a   Krishna, S ^a   Bhattacharya, P ^a   Kennerly, S ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROUND STATE; HETEROJUNCTIONS; INFRARED DETECTORS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMOGRAPHY (IMAGING);

QUANTUM-DOT DETECTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035898429     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1385584     Document Type: Article

References (13)