Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1-x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures

Applied Physics Letters

Volumn 71, Issue 7, 1997, Pages 927-929

  Kamath, K ^a   Chervela, N ^a   Linder, K K ^a   Sosnowski, T ^a   Jiang, H T ^a   Norris, T ^a   Singh, J ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; LASERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

GROUND STATE; INCIDENT EXCITATION INTENSITY; LUMINESCENT DECAY; QUANTUM DOT LASER STRUCTURE; THRESHOLD EXCITATION DENSITY; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031206872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119691     Document Type: Article

References (16)