Intersubband gain and stimulated emission in long-wavelength (λ = 13 μm) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices

IEEE Journal of Quantum Electronics

Volumn 37, Issue 8, 2001, Pages 1066-1074

  Krishna, Sanjay ^a,b   Bhattacharya, P ^a,b   Singh, J ^a,b   Norris, T ^a,b   Urayama, J ^b   McCann, Patrick J ^c   Namjou, Khosrow ^c  

^a IEEE   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c University of Oklahoma   (United States)

Author keywords

Far infrared emission; Intersubband devices; Quantum dots

Indexed keywords

DIRECT FEMTOSECOND PUMP-PROBE SPECTROSCOPY; ELECTRON RELAXATION; FAR-INFRARED SPONTANEOUS EMISSION; INTERSUBBAND DEVICE; PLASMON-ENHANCED WAVEGUIDE DEVICE; QUANTUM-DOT ELECTROLUMINESCENT DEVICE;

ELECTRIC IMPEDANCE MEASUREMENT; ELECTRONS; GROUND STATE; HOT CARRIERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035421217     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.937396     Document Type: Article

References (41)

1. Role of strain and growth conditions on the growth front profile of InxGal-xAs on GaAs during the pseudomorphic growth regime
2. Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields
4. Strain energy and critical thickness of heteroepitaxial InGaAs layers on GaAs substrate
5. Lasing with low threshold current and high output power from columnar shaped InAs/GaAs quantum dots
6. Performance and physics of quantum-dot lasers with self-assembled columnar shaped and 1.3 μm emitting InGaAs quantum dots
7. InGaAs-GaAs quantum dot lasers
8. Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
9. Optical characteristics of 1.24 μm InAs quantum-dot lasers
10. In(Ga)As/GaAs self organized quantum dot laser: DC and small signal modulation properties
11. 0.6As/GaAs quantum dots
12. Far-infrared photoconductivity in self organized InAs quantum dots
13. Normal incidence intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
14. Self-assembled InAs/GaAs quantum dot intersubband detectors
15. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
16. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors
17. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
18. Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers
19. Temperature dependence of dynamic and dc characteristics of quantum dot and quantum well lasers: A comparative study
20. Room temperature mid-infrared quantum cascade lasers
21. Buried heterostructure quantum cascade lasers with a large optical cavity waveguide
22. Vertically aligned and electronically coupled growth induced InAs islands in GaAs
23. 0.6As grown on GaAs substrate
24. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
25. Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
26. Near-field spectroscopy of a single InGaAs self-assembled quantum dot
27. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
28. 0.6As/GaAs quantum dots characterized by differential transmission spectroscopy
29. Observation of phonon bottleneck in quantum dot electronic relaxation
30. 0.6As/GaAs self-organized quantum dot lasers
31. Impedance characteristics of quantum well lasers
32. Well-barrier hole burning in quantum well lasers
33. Photoluminescence and time resolved photoluminescence characteristics of InxGa1-xAs/GaAs single and multi-layer quantum dot laser structure
34. Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities
35. Conduction band spectra in self-assembled InAs/GaAs dots: Comparison of effective mass and an eight-band approach
36. Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots
37. Room-temperature far infrared emission from self-organized InGaAs/GaAs quantum dot laser
38. Mid-infrared emission from near-infrared quantum dot lasers
39. Room-temperature long-wavelength (λ = 13.3 μm) unipolar quantum dot intersubband laser
40. Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection