Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities

IEEE Photonics Technology Letters

Volumn 8, Issue 4, 1996, Pages 488-490

  Singh, Jasprit ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON EMISSION; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

CARRIER INJECTION; HIGH PHOTON DENSITY CAVITIES; INTRABAND ENERGY RELAXATION; INTRABAND LASING; QUANTUM DOT STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030125910     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.491092     Document Type: Article

References (13)

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