Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 979-981

  Grundmann, M ^a   Ledentsov, N N ^a   Stier, O ^a   Bimberg, D ^a   Ustinov, V M ^b   Kop'ev, P S ^b   Alferov, Zh I ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; FINITE DIFFERENCE METHOD; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

ELASTIC CONTINUUM THEORY; EXCITED STATES; GROUND STATE; HOLES; INDIUM ARSENIDE; PYRAMIDAL SHAPE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030081793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116118     Document Type: Article

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