Long-wavelength (≈ 15.5 μm) unipolar semiconductor laser in GaAs quantum wells

Applied Physics Letters

Volumn 71, Issue 25, 1997, Pages 3619-3621

  Gauthier Lafaye, O ^a   Boucaud, P ^a   Julien, F H ^a   Sauvage, S ^a   Cabaret, S ^a   Lourtioz, J M ^a   Thierry Mieg, V ^b   Planel, R ^b  

^a CNRS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE LASERS; ELECTRON ABSORPTION; ELECTRONIC DENSITY OF STATES; INFRARED SPECTROSCOPY; LIGHT EMISSION; NUMERICAL METHODS; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DOPING LEVELS; FREE CARRIER ABSORPTION LOSSES; LASER EMISSION; LASER STRUCTURES;

QUANTUM WELL LASERS;

EID: 0031357199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120459     Document Type: Article

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