Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 479-483

  Pamulapati, J ^a,c   Bhattacharya, P K ^a   Singh, J ^a   Berger, P R ^a,d   Snyder, C W ^b,e   Orr, B G ^b   Tober, R L ^c  

^a The Department of Civil and Environmental Engineering   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF DELAWARE   (United States)

^e LUCENT TECHNOLOGIES   (United States)

Author keywords

InGaAs GaAs; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy (STM); Strained layer growth

Indexed keywords

EID: 0042240963     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666623     Document Type: Article

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