Quantum dot infrared photodetector using modulation doped inas self-assembled quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2559-2561

  Horiguchi, Naoto ^a   Futatsugi, Toshiro ^a   Nakata, Yoshiaki ^a   Yokoyama, Naoki ^a   Mankad, Tanaya ^b   Petroff, Pierre M ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b University of California   (United States)

Author keywords

Inas dot; Intersubband transition; Modulation doping; Polarization dependence; Quantum dot infrared photodetector

Indexed keywords

EID: 0001613794     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2559     Document Type: Article

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