Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 361-363

  Heitz, R ^a   Grundmann, M ^a   Ledentsov, N N ^a   Eckey, L ^a   Veit, M ^a   Bimberg, D ^a   Ustinov, V M ^b   Egorov, A Yu ^b   Zhukov, A E ^b   Kop'ev, P S ^b   Alferov, Zh I ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY TRANSFER; INTERFACES (MATERIALS); PHONONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

FULL WIDTH AT HALF MAXIMUM; INDIUM ARSENIDE; INHOMOGENEOUS LINE BROADENING; MULTIPHONON RELAXATION PROCESSES; PHONON ENERGY; PHOTOLUMINESCENCE EXCITATION SPECTRA; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029759085     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116716     Document Type: Article

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