Crystalline silicon nitride passivating the Si(1 1 1) surface: A study of the Au growth mode

Surface Science

Volumn 579, Issue 2-3, 2005, Pages 188-196

  Flammini, R ^a   Belkhou, R ^b   Wiame, F ^b   Iacobucci, S ^a   Taleb Ibrahimi, A ^b  

^a CNR   (Italy)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Gold; Passivation; Photoelectron spectroscopy; Photoemission; Silicon; Silicon nitride

Indexed keywords

ATTENUATION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DEPOSITION; GOLD; INSULATION; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SILICON NITRIDE; SINGLE CRYSTALS; THIN FILMS;

CRYSTALLINE SILICON NITRIDE; THERMAL PASSIVATION; VALENCE BAND PHOTOELECTRON SPECTROSCOPY; VOLMER-WEBER GROWTH MODE;

SURFACE TREATMENT;

EID: 14944345393     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.02.005     Document Type: Article

References (62)

1. S. Sze Semiconductor devices: physics and technology 1985 Bell Telephone Laboratories Inc.
2. R. Gould, and S. Awan Thin Solid Films 398 2001 454 and reference therein
3. T. Eriksson, and C. Granqvist J. Appl. Phys. 60 1986 2081
4. M. Sobolewsky, and C. Helms Appl. Phys. Lett. 54 1989 638
5. B.-R. Zhang, Z. Yu, G. Collins, T. Hwang, and W. Ritchie J. Vac. Sci. Technol. A 7 1989 176
6. A. Belyj Silicon nitride in electronics Materials science monographs Vol. 34 1988 Elsevier Amsterdam
7. F. Boszo, and P. Avouris Phys. Rev. B 38 1988 3937
8. R. Hamers, P. Avouris, and F. Boszo Phys. Rev. Lett. 59 1987 2071
9. L. Kubler, J. Bischoff, and D. Bolmont Phys. Rev. B 38 1988 13113
10. G. Rangelov, J. Stober, B. Eisenut, and T. Fauster Phys. Rev. B 44 1991 1954
11. C.H.F. Peden, J.W. Rogers Jr., N.D. Shinn, K.B. Kidd, and K.L. Tsang Phys. Rev. B 47 1993 15622
12. J. Stober, B. Eisenut, G. Rangelov, and T. Fauster Surf. Sci. 321 1994 111
13. J. Keister, J. Rowe, J. Kolodzei, H. Niimi, T. Madey, and G. Lucovsky J. Vac. Sci. Technol. B 17 1999 1831
14. R. de Almeida, and I. Baumvol Phys. Rev. B 62 2000 R16225
15. J. Kim, H. Yeom, K. Kong, B. Yu, D. Ahn, Y. Chung, C. Whang, H. Yi, Y. Ha, and D. Moon Phys. Rev. B 90 2003 106101
16. C. Maillot, H. Roulet, and G. Dufour J. Vac. Sci. Technol. B 2 1984 316
17. M. Björkqvist, M. Göthelid, and U. Karlsson Surf. Sci. Lett. 394 1997 L155
18. X. Sen Wang, G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. Tang, X.W.K. Fung, and N. Cue Surf. Sci. 494 2001 83
19. E. Bauer, Y. Wey, T. Müller, A. Pavloska, and I.T. Tsong Phys. Rev. B 51 1995 17891
20. C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh, and S. Gwo Phys. Rev. B 65 2002 045309
21. M. Björkqvist, M. Göthelid, T. Grehk, and U. Karlsson Phys. Rev. B 57 1998 2327
22. G. Dufour, F. Rochet, H. Roulet, and F. Sirotti Surf. Sci. 304 1994 33
23. J. Kim, and H. Yeom Phys. Rev. B 67 2003 035304
24. M. Tabe, and T. Yamamoto Surf. Sci. 376 1997 99
25. J. Ha, K.-H. Park, W. Yun, Y.-J. Ko, and S. Kim Surf. Sci. 426 1999 373
26. A. Zerr, G. Miehe, G. Serghiou, M. Schwarz, E. Kroke, R. Riedel, H. Fueß, P. Kroll, and R. Boehler Nature 400 1999 340
27. Y. Morita, and H. Tokumoto Surf. Sci. 466 2000 L802
28. G. Zhai, J. Yang, N. Cue, and X. sen Wang Thin Solid Films 366 2000 121
29. X. sen Wang, G. Zhai, J. Yang, and N. Cue Phys. Rev. B 60 1999 R2146
30. H. Ahn, C.-L. Wu, S. Gwo, C. Wei, and Y. Chou Phys. Rev. Lett. 86 2001 2818
31. Y.-N. Xu, and W. Ching Phys. Rev. B 51 1995 17379
32. G.L. Zhao, and M. Bachlechner Phys. Rev. B 58 1998 1887
33. V.A. Gritsenko, A. Shaposhnikov, W. Kwok, H. Wong, and G.M. Jidomirov Thin Solid Films 437 2003 135
34. R. Nietubyć, E. Sobczak, O. Šipr, J. Vackář, and A. Šimunek J. Alloys Compds. 286 1999 148
35. L. Aballe, L. Gregoratti, A. Barinov, M. Kiskinova, T. Clausen, S. Gangodadhyay, and J. Falta Appl. Phys. Lett. 84 2004 5031
36. J. Kolnik, J. Ivanco, M. Ožvold, F. Wyczisk, and J. Olivier J. Appl. Phys. 73 1993 5075
37. V. Gritsenko, E. Meerson, and Y. Morokov Phys. Rev. B 57 1998 R2081
38. A. Ishizaka, and Y. Shiraki J. Electrochem. Soc. 133 1986 666
39. G.M. Rignanese, and A. Pasquarello Appl. Phys. Lett. 76 2000 553
40. G.M. Rignanese, and A. Pasquarello Phys. Rev. B 63 2001 075307
41. A. Stesmans, and G.V. Gorp Phys. Rev. B 52 1995 8904
42. G. Wiech, and A. Šimunek Phys. Rev. B 49 1994 5398
43. S. Makler, G.M. da Rocha, and E. Anda Phys. Rev. B 41 1990 5857
44. D. Baek, H. Kang, and J.-W. Chung Phys. Rev. B 49 1994 2651
45. V.A. Gritsenko, Y. Morokov, and Y. Novikov Appl. Surf. Sci. 113 1997 417
46. S. Iwata, and A. Ishizaka J. Appl. Phys. 79 1996 6653
47. H. Öfner, R. Hofmann, J. Karft, F. Netzer, J. Paggel, and K. Horn Phys. Rev. B 50 1994 15120
48. S.L. Molodsov, C. Laubshat, G. Kaindl, A.M. Shikin, and V.K. Adamchuk Phys. Rev. B 44 1991 8850
49. J.J. Yeh, J. Hwang, K. Bertness, D.J. Friedman, R. Cao, and I. Lindau Phys. Rev. Lett. 70 1993 3768 and references therein
50. J. Terry, R. Cao, C. Wigrena, and P. Pianetta J. Vac. Sci.Technol. A 12 1994 1869
51. P.H. Citrin, G.K. Wertheim, and Y. Baer Phys. Rev. Lett. 41 1978 1425
52. O. Hernan, A.D. Parga, J. Gallego, and R. Miranda Surf. Sci. 415 1998 106
53. A. Kolmakov, J. Kovac, S. Günther, L. Casalis, L. Gregoratti, M. Marsi, and M. Kiskinova Phys. Rev. B 55 1997 4101
54. R. Flammini, F. Wiame, R. Belkhou, M. Marsi, L. Gregoratti, A. Barinov, M. Kiskinova, and A. Taleb-Ibrahimi Surf. Sci. 564 2004 121
55. T.-W. Pi, A.-B. Yang, C. Olson, and D. Lynch Phys. Rev. B 42 1990 9266
56. M. Iwami, T. Terada, H. Tochihara, M. Kubota, and Y. Murata Surf. Sci. 194 1988 115
57. S.-T. Lee, G. Apai, M. Mason, R. Benbow, and Z. Hurych Phys. Rev. B 23 1981 505
58. G. Wertheim, S. DiCenzo, and S. Youngquist Phys. Rev. Lett. 51 1983 2310
59. J. Ivanco, H. Kobayashi, J. Almeida, G. Margaritondo, and E. Pincik J. Appl. Phys. 90 2001 345
60. K. Hricovini, J.E. Bonnet, B. Carriére, J.P. Deville, M. Handbücken, and G. le Lay Surf. Sci. 211 1989 630
61. H. Roulet, J.-M. Mariot, G. Dufour, and C.F. Hague J. Phys. France 10 1980 1025
62. V.G. Lifshits, A.A. Saranin, and A. Zotov Surface Phases on Silicon: Preparation, Structures and Properties 1998 Wiley