Spontaneous N incorporation onto a Si(100) surface

Physical Review Letters

Volumn 90, Issue 10, 2003, Pages

  Kim, J W ^a   Yeom, H W ^a   Kong, K J ^b   Yu, B D ^b   Ahn, D Y ^b   Chung, Y D ^a   Whang, C N ^a   Yi, H ^c   Ha, Y H ^d   Moon, D W ^d  

^a Yonsei University   (South Korea)

^b University of Seoul   (South Korea)

^c Korea Institute of Science and Technology Information (KISTI)   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BINDING ENERGY; CHEMICAL BONDS; DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SILICON NITRIDE; SURFACE STRUCTURE; ULTRATHIN FILMS;

ATOMIC STRUCTURE; HIGH RESOLUTION PHOTOEMISSION SPECTROSCOPY; MEDIUM-ENERGY ION SCATTERING; NITRIDATION; SURFACE ADSORPTION;

SEMICONDUCTING SILICON;

EID: 0038640284     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. T. Hori, Gate Dielectrics and MOS ULSIs (Springer-Verlag, Berlin, 1997).
2. Z.-Q. Yao, J. Appl. Phys. 78, 2906 (1995)
3. H. C. Lu et al., Appl. Phys. Lett. 69, 2713 (1996).
4. Z. H. Lu, S. P. Tay, R. Cao, and P. Pianetta, Appl. Phys. Lett. 67, 2836 (1995)
5. D. Bouvet et al., J. Appl. Phys. 79, 7114 (1996).
6. Ph. Avouris, F. Bozso, and R. J. Hamers, J. Vac. Sci. Technol. B 5, 1387 (1987).
7. Y. Taguchi et al., Surf. Sci. 217, L413 (1989).
8. M. Carbone et al., Surf. Sci. 467, 49 (2000).
9. L. Kubler, J. L. Bischoff, and D. Bolmont, Phys. Rev. B 38, 13 113 (1988)
10. G. Rangelov, J. Stober, B. Eisehut, and Th. Fauster, ibid. 44, 1954 (1991).
11. J. L. Bischoff, F. Lutz, D. Bolmont, and L. Kubler, Surf. Sci. 251/252, 170 (1993).
12. H. J. Shin, Y. Chung, and B. Kim, J. Electron Spectrosc. Relat. Phenom. 101-103, 985 (1999).
13. Y. D. Chung, J. W. Kim, C. N. Whang, and H. W. Yeom, Phys. Rev. B 65, 155310 (2002).
14. J. W. Kim et al., Phys. Rev. B 66, 035312 (2002).
15. G.-M. Rignanese et al., Phys. Rev. Lett. 79, 5174 (1997).
16. G. F. Cerofolini et al., Phys. Rev. B 61, 14 157 (2000).
17. G.-M. Rignanese and A. Pasquarello, Appl. Phys. Lett. 76, 553 (2000).
18. Y. Widjaja and C. B. Musgrave, Phys. Rev. B 64, 205303 (2001).
19. L. T. Ueno and F. R. Ornellas, Surf. Sci. 490, L637 (2001).
20. X. Xu, S.-Y. Kang, and T. Yamabe, Phys. Rev. Lett. 88, 076106 (2002).
21. J. F. van der Veen, Surf. Sci. Rep. 5, 199 (1985)
22. Y. P. Kim, S. K. Choi, H. K. Kim, and D. W. Moon, Appl. Phys. Lett. 71, 3504 (1997)
23. Y. Kido and T. Koshikawa, J. Appl. Phys. 67, 187 (1990).
24. T. Uchiyama and M. Tsukada, Phys. Rev. B 55, 9356 (1997).
25. The energies of sites TD, BD, H, C, and BR are higher than that of site D by 0.22, 0.3, 0.69, 0.78, and 1.56 eV, respectively.
26. A direct energetic comparison between HC and Nsub sites is limited due to the different number of Si atoms in the unit cell.
27. B. D. Yu et al., Phys. Rev. B 58, 3549 (1998).
28. S. Jeong and A. Oshiyama, Phys. Rev. B 58, 12958 (1998).
29. R. Kosugi et al., Appl. Phys. Lett. 74, 3939 (1999).