Electronic structure of amorphous Si 3 N 4 : Experiment and numerical simulation

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 417-421

  Gritsenko, V A ^a   Morokov, Yu N ^b   Novikov, Yu N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

Electronic structure; Silicon nitride

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMON OSCILLATIONS; VALENCE BAND; X RAY EMISSION;

AMORPHOUS MATERIALS;

EID: 0031547502     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00944-0     Document Type: Article

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