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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1311-1316

Wetting effect on gap filling submicron damascene by an electrolyte free of levelers

(9) Chang, Shih Chieh a Shieh, Jia Min b Lin, Kun Cheng a Dai, Bau Tong b Wang, Ting Chun a Chen, Chia Fu a Feng, Ming Shiann a Li, Ying Hao c Lu, Chih Peng c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c Merck Kanto Advanced Chemicals Ltd (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHLORINE; COPPER COMPOUNDS; CURRENT DENSITY; ELECTROLYTES; ELECTROPLATING; MOLECULAR WEIGHT; NEGATIVE IONS; POLARIZATION; POLYETHYLENE GLYCOLS; SULFURIC ACID; WETTING;

ACID COPPER ELECTROLYTE; CHLORIDE; COPPER SULFATE; CUPRIC ION REDUCTION; GAP FILLING SUBMICRON DAMASCENE;

COPPER PLATING;

EID: 0035982524 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1486231 Document Type: Conference Paper

Times cited : (20)

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